Micron Technology has started construction on a new cleanroom building at its site in Higashihiroshima, in Hiroshima Prefecture, marking an expansion of its operations in western Japan.

The company said the build-out will proceed in multiple stages.

Discover B2B Marketing That Performs

Combine business intelligence and editorial excellence to reach engaged professionals across 36 leading media platforms.

Find out more

The opening phase will cover about 27871sqm, and is intended to add to Micron’s capacity for advanced memory production in Japan.

Fujita is the lead contractor for the development. Manufacturing tools are due to be installed in the latter half of 2028, with Micron citing fast-growing requirements for advanced memory as the uptake of AI widens.

The project has government backing through a subsidy of as much as Y536bn ($3.3bn).

That support was announced by Japan’s Ministry of Economy, Trade and Industry on 12 September 2025 for advanced memory research, development and manufacturing in Hiroshima.

Separate media reports have estimated the overall investment at around Y1.5tn ($9.24bn).

Micron said the spread of AI across data centre systems and edge computing is driving continued increases in demand for advanced DRAM and high-bandwidth memory.

It added that the Hiroshima development represents the most substantial cleanroom expansion at the site since Micron took over Elpida Memory in 2013.

The company said the additional capacity would support the introduction of future technologies across its global manufacturing and R&D operations, while also contributing to US-Japan cooperation and wider public-private collaboration in memory technology and supply chain support.

Micron also said the development would extend its work with Japanese suppliers, academic organisations and local communities, adding to its role within Hiroshima’s semiconductor industry.

Micron Technology senior vice president of DRAM technology & products Shigeru Shiratake added: “Micron’s Hiroshima site has facilitated key DRAM technology transitions, including the production of 1-beta (1β) DRAM and the introduction of extreme ultraviolet (EUV) lithography technology for 1-gamma (1γ) DRAM.

“The Hiroshima team works closely with R&D teams in the US and globally to play a key role in the development of advanced DRAM and HBM for next-generation AI,” he added.

In the longer term, the company expects the project to contribute to an increase in staffing, including the creation of more than 1,000 jobs.

Micron Technology executive vice president of global operations Manish Bhatia said: “As AI expands the demand for memory to unprecedented levels, Micron is strengthening its supply capacity across its global manufacturing network, which extends to key locations including Japan, while keeping its cutting-edge investments in the United States at its core.”