Samsung affiliates plan Won12.26tn ($9.15bn) in semiconductor investment, with nearly Won8tn directed to Vietnam and to domestic capacity expansion in South Korea, reported The Korea Herald.
Samsung Electronics has submitted an investment plan to local authorities covering VND105.79tn for memory chip testing facilities at Yen Binh Industrial Park in Thai Nguyen, northern Vietnam.
The facilities will conduct final testing of DRAM and NAND flash chips packaged at Samsung Electronics’ Cheonan site in South Korea. It will not produce wafers.
DRAM (Dynamic Random-Access Memory) is fast, temporary memory used for active tasks, whereas NAND (Not AND) flash is permanent, non-volatile memory used for long-term file and device storage.
The first testing line is due to begin operations in the fourth quarter of 2027, followed by a second line in 2028.
Reinvested profits from Samsung’s Vietnam operations will provide about 63% of the funding, or VND66.64tn.
Samsung Electronics has produced smartphones in Thai Nguyen since 2013.
It recently sent 103 Vietnamese engineers to its Cheonan and Onyang plants for training in memory testing and equipment operation.
Samsung has not stated how testing volumes will be allocated between the locations.
It remains unconfirmed whether the Vietnam capacity will add to domestic operations or take on work currently conducted at South Korean facilities.
Samsung Electro-Mechanics separately announced that it will invest Won6.78tn to increase flip-chip ball grid array (FC-BGA) substrate production capacity.
Of that total, Won4.27tn will go to its Sejong site in South Korea and Won2.51tn to Vietnam.
Mass production at the expanded Sejong plant is planned for September 2028, concentrating on high-value and technically demanding products.
The Vietnam expansion is scheduled for completion and commercial operation by June 2030, with the company citing global order growth.
Samsung Electro-Mechanics said the investment has funding support and medium- to long-term purchase commitments from global customers.
